型号:

IRFHM830DTRPBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 30V 20A PQFN
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRFHM830DTRPBF PDF
标准包装 4,000
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 20A
开态Rds(最大)@ Id, Vgs @ 25° C 4.3 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大) 2.35V @ 50µA
闸电荷(Qg) @ Vgs 27nC @ 10V
输入电容 (Ciss) @ Vds 1797pF @ 25V
功率 - 最大 2.8W
安装类型 表面贴装
封装/外壳 8-VQFN 裸露焊盘
供应商设备封装 PQFN(3x3)
包装 带卷 (TR)
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